O2þ versus Csþ for high depth resolution depth profiling of III–V nitride-based semiconductor devices

Optimum depth resolution with adequate sensitivity for the elements of interest is required to obtain the information desired from SIMS analysis of multilayer nitride III–V structures. For many of the species of interest, particularly the p-type dopants, O2þ bombardment at low energy is often used. Use of Csþ bombardment and detection of the cesium attachment secondary ions (CsMþ where M is the element of interest) may provide several advantages over O2þ analysis. Using similar low primary ion impact energy analysis conditions for O2þ and Csþ on CAMECA IMS-6f and IMS-4f instruments, the depth resolution obtained for positive secondary ions is compared. # 2004 Elsevier B.V. All rights reserved.