• Title of article

    SIMS depth profiling of SiGe:C structures in test pattern areas using low energy cesium with a Cameca IMS Wf

  • Author/Authors

    M. Juhel، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2004
  • Pages
    6
  • From page
    698
  • To page
    703
  • Abstract
    In this paper, we describe our utilization of SIMS to support development of new SiGe:C structures for BiCMOS industrial processes. The goal is to perform quantitative germanium and carbon depth profiles in test areas of 300 mm 300 mm with optimum depth resolution and detection limits. # 2004 Elsevier B.V. All rights reserved
  • Keywords
    sIgE , Carbon , SIMS , BICMOS , cesium
  • Journal title
    Applied Surface Science
  • Serial Year
    2004
  • Journal title
    Applied Surface Science
  • Record number

    999686

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=999686