On the electrical monitor for device degradation in the CHISEL stress regime

This paper reports a complete characterization of hot carrier-induced degradation in the CHannel Initiated Secondary ELectron (CHISEL) regime covering a large set of different stress bias conditions. Using several physical and electrical parameters, our results demonstrate that in the CHISEL regime, differently from the channel hot electrons case, the device degradation is univocally related to the gate current independently of the drain, source, substrate bias, and of the oxide electric field. The gate current is thus identified as the electrical monitor for device degradation in the CHISEL stress conditions.