• DocumentCode
    1918
  • Title

    A TRANSIENT MODEL FOR INSULATED GATE BIPOLAR TRANSISTORS )IGBTs(

  • Author

    Amro El-Jaroudi استاد مشاور , ietrich Langer استاد مشاور , Mahmoud El Nokali استاد راهنما

  • University
    university of pittsburgh
  • Grade
    دكتري
  • Major
    Doctor of Philosophy )Electrical Engineering(
  • Number of pages
    0
  • Publish Date
    2002
  • Keyword

    MOSFET channel , PT IGBT , Modeling IGBT , Depletion capacitance

  • Note
    01
  • Language
    انگليسي
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=17&DC=1918