DocumentCode
23591
Title
Electrical properties of ultra thin Al2O3 and HfO2 films as gate dielectrics in MOS technology
Author
Fiory Anthony استاد مشاور , Ravindra N. M. استاد راهنما
University
Van Houten Library )new Jersey Institute Of Technology(
Grade
نامعلوم
Major
Master of Science )Materials Science and Engineering(
Number of pages
0
Publish Date
2002
Keyword
atomic layer deposition
Note
01
Language
انگليسي
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