DocumentCode
5767
Title
INVESTIGATION AND CHARACTERIZATION OF AlGaN/GaN DEVICE STRUCTURES AND THE EFFECTS OF MATERIAL DEFECTS AND PROCESSING ON DEVICE PERFORMANCE
Author
Leonard J. Brillson استاد راهنما
University
OhioLINK ETD
Grade
دكتري
Major
Doctor of Philosophy )Ohio State University, Electrical Engineering(
Number of pages
0
Publish Date
2002
Keyword
Devices , HEMT , HFET , memory effect , transistor , fabrication , HBT , III-Nitride , characterization , AlGaN/GaN , CLS , AlGaN , cathodoluminescence , GaN , LEEN , Heterojunction , ohmic , heterostructure , yellow luminescence , Defects , threading dislocation , Interfaces
Note
01
Language
انگليسي
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