DocumentCode
6037
Title
Etch rate modification by implantation of oxide and polysilicon for planar double gate MOS fabrication
Author
Collaert Nadine استاد مشاور , Bayot Vincent استاد راهنما
University
UCL )Les Bibliotheques de L,Universite Catholique de Louvain(
Grade
دكتري
Major
FSA 3 - Doctorat en sciences appliqu{ف }es
Number of pages
0
Publish Date
2007
Keyword
Etch rate modification , Planar double gate , Buried mask , Etching selectivity , Ion implantation
Note
01
Language
انگليسي
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