تحديد ارتفاع حاجز شوتكي لديود ملدن وغير ملدن Ni – n-GaAs بوساطة المميزات السعوية (C-V)

In this research ,the characteristics C-V were studied for annealed and non- annealed Schottky diodes of Ni-n-GaAs type at 300K temperature before and after irradiation by different laser energies. Donor impurities concentration in the diode substrate was calculated and it ranged between (0,63 ×1015 -0,65×1015)cm-3 in non-annealed diodes. While it was ranged between(1.08×1015-0.94×1015 )cm-3 in annealed diodes. The capacity increased by the increase of the laser doses in the non-annealed diodes while it decreased in annealed diodes. In addition to, Schottky barrier height in non-annealed diodes was calculated and it ranged between( 0.708- 0.688)V. While in annealed diodes, it ranged between (0.79 -0.87)V. Finally this height was calculated according to Schottky theory and the results were very close