شماره ركورد
67676
عنوان مقاله
Investigation of the Ag-BaF2-GaSb schottky diode current versus voltage, capacitance with voltage and photoelectric measurement
پديد آورندگان
Abdulaziz, Abdulsamee F. University of Tikrit - Department of Physics, Iraq , Mohamamed, Subry J. University of Tikrit - Department of Physics, Iraq , Khaleel, Khalaf I. University of Tikrit - Department of Physics, Iraq
از صفحه
386
تا صفحه
393
تعداد صفحه
8
چكيده عربي
لا يمكن إدراج ملخص المقال
چكيده لاتين
Schottky barrier-type devices are rectifying metal-semiconductor (M-S) structure. This device is used in microelectronics, in solar cell applications, and in chemical sensing [1]. In the Schottky model the amount of band bending is equal to the difference between the work functions, Φm and Φs of the metal and semiconductor respectively. Thus qVi =Φm - Φs
كليدواژه
schottky diode current , Ag-BaF2-GaSb , versus voltage , photoelectric measurement , capacitance with voltage
سال انتشار
2012
عنوان نشريه
مجله كليه التربيه الاساسيه للعلوم التربويه و الانسانيه
عنوان نشريه
مجله كليه التربيه الاساسيه للعلوم التربويه و الانسانيه
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