Heterojunction at Visible and Near Infrared

In this research we have made the heterojunction device (p-CdTe/n-Si) by using Aluminum and Gold metals with high purity (99، 999%) as O’hmic contact by vacuum thermal evaporation technique. The spectrum responsivity of this detector was measured, and the highest two peaks were calculated, which equivalent (0، 22، 0، 196A/W) at wavelength (500,850 nm), respectively, each of the quantum efficiency, noise equivalent power, detectivity and specific detectivity. From the characteristic above, the heterojunction (p-CdTe/n-Si) was determined as a detector of visible and a fraction of the near infrared light within the spectrum (300، 1050 nm).