حساب معامل سيباك لاغشية CdSe المحضرة بمعدلات ترسيب مختلفة

In this paper CdSe thin films have been prepared deposited on glass substrate by thermal evaporation technique at thickness 250nm with different depositions rate (0.4,0.8,1.2)nm/s and substrate temperatures (Ts) (300,373,423,473)K. thermoelectric power were measured to this films (Seebak coefficient) and activation energy were evaluated, the results shows that all films were of n-type conductivity and activation energy increases with depositions rate and substrate temperate films prepared at 0.8nm/s with Ts 423K and 1.2nm/s with Ts (423,473)K, except that they were of p-type conductivity.