Capacitance-Voltage and Current-Voltage Characteristics for CdSSe junction

n-CdSSe thin films were prepared by thermal evaporation technique at room temperature on p-Si substrate under vacuum of 10-6 mbar . Thickness of the film is 800nm . The effect of the annealing temperature (298,323 and 348) K on the electrical characterizations of CdSSe junctions was studied. The electrical properties are included the capacitance-voltage( C-V) and currentvoltage (I-V) measurements in the range (0-2)Volt is measured. From C-V measurements, the built in- voltage (Vbi )is calculated under different annealing temperatures and different frequencies(100Hz, 1kHz and 10kHz), while from IV measurements, the ideality factor (ß )is calculated.