تعيين طيف كثافة الحالات في الفجوة الطاقية لأنصاف النواقل غير المتبلورة

The aim of this search is to analyze disadvantage of the approach used in the distribution spectra calculation of density of states localized in the energy gap [N(E)]. We suggest a new approach of the distribution spectra calculation of N(E) of amorphous semiconductors; amorphous hydrogenated silicon (a-Si:H) and amorphous hydrogenated silicon-carbide (a-SiC:H). In this research, experimental spectra N(E) based on the new suggested approach are presented for the investigated samples, prepared by sputtering in Ar/H plasma atmosphere. Interpretation of the obtained results depends on the change of column concentration, when the condensation conditions of a-Si:H and a-SiC:H are changed.