دراسة شبه تجريبية لمدى توزع أيونات B ,Al ,P, As المزروعةفي السيلكون الأمورفي

This paper aims to calculate the distribution range R of implanted ions B ,Al ,P ,As in silicon target which accelerated to energies ranged between 50 – 300 keV using semi-empirical method in order to dope the Si –semiconductor with n and p type of charge carriers. In addition, we calculate the scattering parameter ( standard deviation) ∆Rp from the projected range Rp. For calculating R we used the numerical integration by writing a Matlab program in suggesting that the impact parameter p takes different values of Bohr radius. It is shown that the range distribution of implanted ions increases gradually by rising the ion beam energy and also by crowing the impact parameter in the interval 0.053 – 0.80Å.