• شماره ركورد كنفرانس
    1730
  • عنوان مقاله

    Simulation and Analysis of Quantum Dot Laser Based on Tunneling Injection

  • عنوان به زبان ديگر
    Simulation and Analysis of Quantum Dot Laser Based on Tunneling Injection
  • پديدآورندگان

    Hashtroodi M نويسنده , Rostami A نويسنده , Ghazisaeedi N نويسنده

  • تعداد صفحه
    6
  • كليدواژه
    Tunneling effect , GS , QD-TI lasers , ES , equivalent circuit model
  • سال انتشار
    2012
  • عنوان كنفرانس
    بيستمين كنفرانس مهندسي برق ايران
  • زبان مدرك
    فارسی
  • چكيده لاتين
    In this paper we propose a new circuit model for a tunneling injection quantum dot lasers (TI-QDL). The detail of our model is based on independent rate equations. The carrierdensity, optical modes and their powers are described independently. The proposed equivalent circuit is simulated bya Pspice and the results are compared with a model that the rate equations are solved numerically
  • شماره مدرك كنفرانس
    4460809
  • سال انتشار
    2012
  • از صفحه
    1
  • تا صفحه
    6
  • سال انتشار
    2012