A New Model of Carbon Nanotube Transistor and its Comparison with MOS in HSPICE

عنوان به زبان ديگر

پديدآورندگان

Sheykhivand Sobhan نويسنده Urmia Branch, Islamic Azad University - Department of Electrical-Electronics Engineering , Naderi Saatlo Ali نويسنده Urmia Branch, Islamic Azad University - Department of Electrical-Electronics Engineering , Alaei Sholeh نويسنده Urmia Branch, Islamic Azad University - Department of Physics , Esmaeili Shahin نويسنده Urmia Branch, Islamic Azad University - Department of Electrical-Electronics Engineering

تعداد صفحه

4

كليدواژه

component , NOT gate , CNTFET , Carbon nanotube field effect transistor

سال انتشار

1395

عنوان كنفرانس

اولين كنفرانس بين المللي دستاوردهاي نوين پژوهشي در مهندسي برق و كامپيوتر

زبان مدرك

فارسی

چكيده لاتين

In this paper, a new model for carbon nanotube field-effect transistor (CNTFET) is presented. In order to demonstrate the feasibility of the model, it is employed in a wellknown inverter circuit and simulation results are obtained. Fettoy software and Hspice simulator are utilized to obtain the model and simulation of the circuit. The simulation results show that using carbon nanotube based transistors, reduce power consumption of the circuit. Besides to this calculations, propagation delay of the circuits are also obtained. Hspice simulation results verify that speed of the CNTFET based circuit is more than MOS based circuit. The paper results emphasize on the ability of carbon nanotube based circuits for replacing in the MOS logical gates with the aim of improving the speed and power consumption.

شماره مدرك كنفرانس

4240260

سال انتشار

1395

از صفحه

1

تا صفحه

4

سال انتشار

1395