Modulation depth and power consumption optimization in silicon based ring resonator modulator based on pn junction

Modulation depth and power consumption optimization in silicon based ring resonator modulator based on pn junction

Abstract—In this paper modulation depth and power con-sumption are optimized in silicon based ring resonator modu-lator. For having minimum bit error rate and easy detection of information at receiver, modulation depth should be max-imized. For decreasing bit error rate, the modulation depth should be increased. Here a specific structure of modulator is considered. For maximizing modulation depth a method is presented. In this method, COMSOL software and analytical equation are used and an optimum voltage is obtained. Also the effects of doping concentration on power consumption are studied. It is shown with reduction of doping concentration, optimum voltage decrease and cause reduction in power con-sumption. Another result of reducing doping concentration is reducing loss in the ring waveguide decrease.