Investigating a Novel Normally-On AlGaN/GaN Capped PHEMT and the Effects of Cap Layers Thickness on its Gate Leakage Current

پديدآورندگان

Alireza Salehi , Hedie Mahmoodnia ,

كليدواژه

AlGaN , GaN capped PHEMT , In0.15Ga0.85N layer , spacer layer , Ion , Ioff ratio.

كشور

ايران

نويسنده

Tara Ghafouri

كلمات كليدي

AlGaN/GaN capped PHEMT, In0.15Ga0.85N layer, spacer layer, Ion/Ioff ratio.

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