Investigation of AlGaN/GaN HEMT electrical characteristics with recessed insulator and barrier at both source and drain sides

پديدآورندگان

Seyed hamid Zahiri , Amir Nejati ,

كليدواژه

GaN HEMT , Drain Current , Output Power Density , DC Trans , Conductance , Gate Capacitance

كشور

ايران

نويسنده

Seyed mohammad Razavi

كلمات كليدي

GaN HEMT; Drain Current; Output Power Density; DC Trans-Conductance; Gate Capacitance

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