Modeling a Resonant tunneling FET on graphene

A field effect transistor on a semiconductor graphene nanoribbon (GNR) is modeled. The regions at two ends of the GNR are highly n-type doped and play role of reservoirs namded source and drain contacts. Two dielectric layers are placed on top and bottom of the GNR and a metallic gate is located on its top above the channel region. At this pape the gate length less than the channel length is assumed. The two un-gated regions of channel act as quantum barriers between channel and the contacts. By applying gate voltage, discrete energy levels are generated in channel and resonant tunneling transport occurs through these levels. By solving the NEGF and 3D Poisson equations self consistently, we have obtained the electron density and current with negative differential resistance (NDR).