Preparation of nanoporous silicon structure for antireflection applications

A simple and effective method is presented for producing light-emitting nanoporous silicon (PSi). Porous silicon structure was fabricated via metal-assisted chemical etching procedure. The effect of molar etching rate (𝜌) was investigated in order to preparing various nanoporous structures. The field emission electron microscopy (FE-SEM) results showed that all etched samples had nanoporous structure and the sample which was immersed into solution with 𝜌~80% had smallest porosities which are measured by digimizer software about 88 nm. Also, the reflectivity as low as 5% could be achieved using this molar etch rate.