شماره ركورد كنفرانس
4334
عنوان مقاله
Effect of nitrogen concentration on the intrinsic losses of InAsxN(1-x) quantum dot solar cells
پديدآورندگان
Arefinia Zahra Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz, Iran , Asgari Asghar Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz, Iran
تعداد صفحه
1
كليدواژه
solar cells
سال انتشار
1396
عنوان كنفرانس
پنجمين گردهمايي بين المللي سالانه سيستم هاي ابعاد پايين
زبان مدرك
انگليسي
چكيده فارسي
The effect of nitrogen concentration on the intrinsic losses of solar cells comprised of InAs(1-x)Nx quantum
dots (QDs) embedded within intrinsic layer of AlP0.5Sb0.5 p-i-n solar cell is investigated through the calculation
of thermalisation and below band gap losses. A finite element method is used for solving Schrödinger equation
to calculate possible energy band configurations of AlP0.5Sb0.5: barrier/ InAs(1-x)Nx: QDs with different nitrogen
concentration. It is found that there is a minimum in the thermalisation and below band gap losses for nitrogen
concentration of 0.06
كشور
ايران
لينک به اين مدرک