Raman and IR characterization of nanocrystalline Indium Oxide for optoelectronics applications

Raman and IR characterization of nanocrystalline Indium Oxide for optoelectronics applications

Nanocrystalline cubic In2O3 thin films were successfully synthesized by thermal evaporation of Indium on unheated Si substrates, followed by thermal wet oxidation. The synthesized products were characterized by X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, micro-Raman spectroscopy. XRD patterns confirmed the crystalline nature and cubic structure of synthesized composition. Crystallite size and strain were evaluated from the XRD data. The vibrational modes of the samples were investigated by Raman spectrum. The effects of strain and crystalline size of In2O3 were studied by FTIR and Raman shifts.

Nanocrystalline cubic In2O3 thin films were successfully synthesized by thermal evaporation of Indium on unheated Si substrates, followed by thermal wet oxidation. The synthesized products were characterized by X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, micro-Raman spectroscopy. XRD patterns confirmed the crystalline nature and cubic structure of synthesized composition. Crystallite size and strain were evaluated from the XRD data. The vibrational modes of the samples were investigated by Raman spectrum. The effects of strain and crystalline size of In2O3 were studied by FTIR and Raman shifts.