Effects of etching time on the morphology of n -type porous silicon structure

The photoelectrochemical etching of n-type silicon (100) surface was performed using HF / Ethanol solution with an optimum constant current density of 25 mA/cm2. Etching times of 15, 25 and 35 min were applied. The optimal etching time is 25 min for creating porous silicon layers based on silicon n-type (100). Average diameter for the porous silicon layer based on silicon n-type (100) were 1.9 m , 2.1 m and 2.6 m at15, 25 and 35 min, respectively .