طراحي جديد يك تقويت كننده توزيع شده CMOS تك طبقه بر اساس تكنيك bulk-driven

A Novel Design of Single-Stage CMOS Distributed Based on Bulk-Driven Technique

This paper presents the design of a CMOS distributed amplifier simulated in a 0.13µm CMOS model that use of bulk-driven technique in order to reduce noise figure. A loss compensation technique is Employed to remove high frequency losses of transmission lines and Bandwidth extension. The single-stage DA is simulated in 0.13 µm CMOS process and provides a 17 ± 0.7 dB gain over a bandwidth of 17.5 GHz. The input/output return loss of the amplifier is lower than -10 dB over the entire bandwidth, with an average noise figure of 2.5 dB and 105 mW DC-power consumption, while circuit input and output are matched with 50 Ω resistance.

This paper presents the design of a CMOS distributed amplifier simulated in a 0.13µm CMOS model that use of bulk-driven technique in order to reduce noise figure. A loss compensation technique is Employed to remove high frequency losses of transmission lines and Bandwidth extension. The single-stage DA is simulated in 0.13 µm CMOS process and provides a 17 ± 0.7 dB gain over a bandwidth of 17.5 GHz. The input/output return loss of the amplifier is lower than -10 dB over the entire bandwidth, with an average noise figure of 2.5 dB and 105 mW DC-power consumption, while circuit input and output are matched with 50 Ω resistance.