The techniques for improvements of the Power Gain and Lattice Temperature

RF power characteristics of a SOI-MESFET were improved with a useful optimization of the simple structure. Separate triple trenches are introduced to the proposed device tخ impact on the electrical performance. The SOI-MESFET with separate triple trenches (TT-SOI MESFET) benefits from these trenches to disperse the potential lines leading to enhancement of RF power features. In the other device, Modification of the potential profile occurs in the channel region and results in decrease in peak electric field. Output power density is successfully boosted owing to improved driving current and breakdown voltage, simultaneously.