شماره ركورد كنفرانس
5328
عنوان مقاله
Investigation of structural and electronic properties of GaN Nanosheet
پديدآورندگان
Ashouria Tara tara_ashouri@email.kntu.ac.ir K. N. Toosi University of Technology, Tehran, Iran , Jalili Seifollah sjalili@kntu.ac.ir K. N. Toosi University of Technology, Tehran, Iran , Ghassemi Mahjan Mohammad mahjani@kntu.ac.ir K. N. Toosi University of Technology, Tehran, Iran
تعداد صفحه
2
كليدواژه
Density functional theory , Two , dimensional Gallium nitride , Electronic properties, structural properties
سال انتشار
1400
عنوان كنفرانس
بيست و سومين كنفرانس شيمي فيزيك انجمن شيمي ايران
زبان مدرك
انگليسي
چكيده فارسي
We have performed the first-principles calculations on the structural and electronic properties of the 2D GaN nanosheet. In this work, the electronic properties of pristine GaN monolayer have been studied using a first-principles calculation based on DFT. The results unveil that these semiconductor monolayer sheets are promising materials for electrical sensors and due to their tunable bandgap semiconductor on the application of the electric field
كشور
ايران
لينک به اين مدرک