Reliable and High Voltage Device with wide bandgap energy material for the Power Applications

A novel LDMOS transistor with two different windows is proposed in this paper. One of the windows is located in the drift region with Si3N4 material. The other window is considered under the drift region with GaN material which has wider bandgap than silicon. These different materials help to modify electric field and obtain high breakdown voltage. Also, the simulation with ATLAS simulator shows that the proposed Si3N4 and GaN windows in SOI LDMOS (SNG-SOI) has better performance in terms of hot electron effect, current capability and on resistance as it is compared to the Conventional SOI LDMOS transistor.