اثر افت زماني و بررسي رابطه ولتاژ با طول عمر حامل در ويفر سيليكان

Time Decay and relationship of voltage with carrier life time of Si wafer

In this paper, we studied time decay of Si wafers with two kind point and stripe contacts. In first method we used two points of silver paint with distance of 1.6 centimeter on the samples. In the second method we used a thin layer of silver paint with width of 2 mm at the same situation. The results are mainly similar but we have got more current and less noise in the second method. Also, by applying higher voltage to the stripe one and drawing I-V curves, we show that life time of carriers increases with increasing drift velocity and number of collisions