Author/Authors
KURT, Hilal Yücel Gazi Üniversitesi - Fen Fakültesi - Fizik Bölümü, Turkey , KALKAN, Gülcan Gazi Üniversitesi - Fen Fakültesi - Fizik Bölümü, Turkey , ÖZER, Metin Gazi Üniversitesi - Fen Fakültesi - Fizik Bölümü, Turkey , TANRIVERDİ, Evrim Gazi Üniversitesi - Fen Fakültesi - Fizik Bölümü, Turkey , YİĞİT, Duygu Gazi Üniversitesi - Fen Fakültesi - Fizik Bölümü, Turkey
Title Of Article
The Effect of The Oxidation on GaAs Semiconductor Surface to the System Characteristics in A Double-Gapped Plasma Cell
شماره ركورد
15801
Abstract
The system characteristic in a double gap gas discharge plasma cell with GaAs cathode has been identified to be unstable due to the oxidation, experimentally. The experimental studies include the system characteristics in a wide range of pressures (p = 28 – 342 Torr), interelectrode distances (d1 = 50 μm d2 = 50 – 320 μm) and semiconductor cathode diameter D (9 mm). Under the applied voltage U=200-2000, the critical voltage values from the Paschen curves are determined.
From Page
161
NaturalLanguageKeyword
Gas discharge , GaAs , plasma , oxidation , double gap
JournalTitle
Journal Of Polytechnic
To Page
165
JournalTitle
Journal Of Polytechnic
Link To Document