Author/Authors
HİÇDURMAZ, Bahadır Dumlupınar University - Faculty of Engineering - Department of Electrical and Electronics Engineering, Turkey , ÖZZAİM, Cengiz Anadolu University, Iki Eylül Kampüsü - Faculty of Engineering - Department of Electrical and Electronics Engineering, Turkey
Title Of Article
A DC~1.6 GHz DISTRIBUTED AMPLIFIER WITH GaAs MESFETs
شماره ركورد
34818
Abstract
Abstract: In this study, a DC ~ 1.6 GHz bandwidth distributed amplifier (DA) is fabricated in printed circuit board (PCB). The scattering (S-) parameters of the distributed amplifier are measured and compared with simulated results. In characterization of the amplifier, small-signal microwave S- parameters given at some discrete frequencies of transistors are utilized. According to obtained results, it is observed that measured and simulated results are in relatively good agreement.
From Page
159
NaturalLanguageKeyword
Distributed amplifier , broadband , S , parameters , PCB fabrication
JournalTitle
Uludağ University Journal of The Faculty of Engineering
To Page
169
JournalTitle
Uludağ University Journal of The Faculty of Engineering
Link To Document