Modeling electromigration lifetime under bidirectional current stress

Author

Tao, Jiang ; Cheung, Nathan W. ; Hu, Chenming

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

16

Issue

11

fYear

1995

Firstpage

476

Lastpage

478

Abstract

Electromigration reliability of interconnect under bidirectional current stress has been studied in a wide frequency range (mHz to 200 MHz). Experimental results show that the AC lifetime rises with the stress current frequency. The current density exponent and the activation energy of AC lifetime are found to be twice that of DC lifetime. Pure AC current stress failure at extremely high current density is believed to result from thermal migration of metal at hot/cold transition points.<>

Keywords

CMOS integrated circuits; current density; electromigration; failure analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit modelling; integrated circuit reliability; 200 MHz; AC current stress failure; AC lifetime; MTTF; activation energy; bidirectional current stress; current density exponent; electromigration lifetime; electromigration reliability; interconnect; modeling; stress current frequency; thermal migration; CMOS integrated circuits; Current density; Electromigration; Frequency; High speed integrated circuits; Integrated circuit interconnections; Parasitic capacitance; Testing; Thermal stresses; Ultra large scale integration;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.468272

Filename

468272