• DocumentCode
    1000637
  • Title

    GaAs 256-bit static RAM

  • Author

    Ohwada, Kazunari ; Ino, M. ; Mizutani, Tomoko ; Asai, Kikuo

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    18
  • Issue
    7
  • fYear
    1982
  • Firstpage
    299
  • Lastpage
    300
  • Abstract
    A GaAs 256×1-bit static RAM with 2000 FETs organised in E/D-type DCFL circuits was successfully fabricated. A planar device structure was realised by using selective ion implantation and dielectric intermediate lift-off technology. The access time and the power dissipation were 50 ns and 9.4 mW, respectively.
  • Keywords
    III-V semiconductors; field effect integrated circuits; gallium arsenide; integrated memory circuits; ion implantation; random-access storage; E/D-type DCFL circuits; FETs; GaAs 256-bit static RAM; MESFET; access time; dielectric intermediate lift-off technology; planar device structure; power dissipation; selective ion implantation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820204
  • Filename
    4249662
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1000637