Nested-Ring Mach–Zehnder Interferometer in Silicon-on-Insulator

Author

Darmawan, S. ; Landobasa, Y.M. ; Dumon, P. ; Baets, R. ; Chin, M.K.

Author_Institution

Nanyang Technol. Univ., Singapore

Volume

20

Issue

1

fYear

2008

Firstpage

9

Lastpage

11

Abstract

For the first time, a nested-ring Mach-Zehnder interferometer (MZI) on silicon-on-insulator is realized using a complementary metal-oxide-semiconductor-based process. In this letter, we verify that the device operates in two modes: the inner-loop resonance dominant mode due to strong build-up inside the inner-ring, and the double-Fano resonances mode due to strong light interaction with the outer loop. The results show that the inner-loop resonance is highly sensitive to the MZI arm imbalance compared to the double-Fano resonance mode. Based on these considerations, we obtain a good fit between theory and experiment.

Keywords

CMOS integrated circuits; Mach-Zehnder interferometers; elemental semiconductors; integrated optics; silicon; silicon-on-insulator; Si; complementary metal-oxide-semiconductor-based process; double-Fano resonances mode; inner-loop resonance dominant mode; integrated optic devices; nested-ring Mach-Zehnder interferometer; silicon-on-insulator technology; Integrated optics; Optical filters; Optical interferometry; Optical modulation; Optical resonators; Optical ring resonators; Optoelectronic and photonic sensors; Photonic integrated circuits; Resonance; Silicon on insulator technology; Guided waves; Mach–Zehnder; high-index contrast; integrated optic devices; microring resonators; nested ring; photonic wire; silicon-on-insulator (SOI) technology;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2007.910618

Filename

4397105