Processing and circuit design enhance a data converter´s radiation tolerance

Author

Heuner, Robert ; Zazzu, Victor ; Pennisi, Louis

Author_Institution

GE Solid State, Somerville, NJ, USA

Volume

35

Issue

6

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

1552

Lastpage

1556

Abstract

Radiation-hard CMOS/SOS processing was applied to a novel comparator-invertor circuit design to develop 6- and 8-bit parallel circuits featuring high-speed operation, low power consumption, and total-dose radiation tolerance up to 1 Mrad(Si). The heart of the radiation tolerant ADC design is a novel CMOS autozero comparator. The autozero function serves to eliminate any comparator offset. The comparator design is also tolerant of voltage threshold variations associated with total-dose radiation

Keywords

CMOS integrated circuits; analogue-digital conversion; comparators (circuits); integrated circuit technology; radiation hardening (electronics); semiconductor technology; semiconductor-insulator boundaries; 1E6 rad; 6 bit; 8 bit; 8-bit parallel circuits; CMOS autozero comparator; CMOS/SOS processing; Si-Al₂O₃; Si-SiO₂; autozero function; circuit design; comparator design; high-speed operation; low power consumption; novel comparator-invertor circuit design; radiation hardness; radiation tolerance; radiation tolerant ADC; tolerant of voltage threshold variations; total-dose radiation tolerance; Capacitors; Circuit synthesis; Clocks; Couplings; Diodes; Inverters; Leakage current; Sampling methods; Threshold voltage; Variable structure systems;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.25496

Filename

25496