Alpha-, boron-, silicon- and iron-ion-induced current transients in low-capacitance silicon and GaAs diodes

Author

Wagner, Ronald S. ; Bordes, Nicole ; Bradley, Jeffrey K. ; Maggiore, C.J. ; Knudson, Alvin R. ; Campbell, Arthur B.

Author_Institution

Los Alamos Nat. Lab., NM, USA

Volume

35

Issue

6

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

1578

Lastpage

1584

Abstract

High-speed current transient measurements were made over a large range of linear energy transfer (LET), using a wideband 70-GHz (6-ps-risetime) sampling oscilloscope on high resistivity GaAs diodes and 1-, 3-, and 10-Ω-cm silicon diodes. For 3- and 5-MeV alpha particles, 12-MeV boron, 18-MeV silicon, and 12- and 100-MeV iron ions incident on these devices, risetimes in the range from about 38 ps to 100 ps were produced depending on LET and device resistivity. Results are compared to the productions of various models

Keywords

III-V semiconductors; alpha-particle effects; boron; elemental semiconductors; gallium arsenide; ion beam effects; iron; radiation hardening (electronics); semiconductor device models; semiconductor diodes; semiconductor technology; silicon; 1 to 10 ohmcm; 3 to 100 MeV; 38 to 100 ps; 6 ps; 70 GHz; B ions; Fe ions; GaAs diodes; He ions; LET; SEU; Si diodes; Si ions; alpha particles; current transient measurements; device resistivity; linear energy transfer; low capacitance diodes; radiation hardness; risetimes; sampling oscilloscope; semiconductors; single event upset; Conductivity; Current measurement; Diodes; Energy exchange; Energy measurement; Gallium arsenide; Oscilloscopes; Sampling methods; Silicon; Wideband;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.25501

Filename

25501