DocumentCode
1001611
Title
An SEU-hardened CMOS data latch design
Author
Rockett, Leonard R., Jr.
Author_Institution
IBM Corp., Manassas, VA, USA
Volume
35
Issue
6
fYear
1988
fDate
12/1/1988 12:00:00 AM
Firstpage
1682
Lastpage
1687
Abstract
A single-event-upset hardened CMOS data latch design is described. The hardness is achieved by virtue of the design; thus no fabrication process or design ground-rule development is required. Hardness is gained with comparatively little adverse impact on performance. Cyclotron tests have provided hardness verification
Keywords
CMOS integrated circuits; combinatorial circuits; integrated logic circuits; radiation hardening (electronics); CMOS data latch design; hardness verification; performance; single-event-upset hardened; CMOS logic circuits; Circuit simulation; Circuit testing; Clocks; Cyclotrons; Fabrication; Latches; Logic design; Process design; Single event upset;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.25522
Filename
25522
Link To Document