MOS RF reliability subject to dynamic voltage stress-modeling and analysis

Author

Yu, Chuanzhao ; Yuan, J.S.

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of Central Florida, Orlando, FL, USA

Volume

52

Issue

8

fYear

2005

Firstpage

1751

Lastpage

1758

Abstract

Dynamic stress on MOSFETs with 900-MHz inverter-like waveforms as well as static (or dc) stress were evaluated experimentally. It showed that the degradation due to dynamic stress is less than that of dc stress for our test transistors. A compact model is used to evaluate the degradation in radio frequency performances, such as transconductance, cutoff frequency, linearity, and noise figure. A class-AB power amplifier is presented as an example to demonstrate the effect of dynamic stress on RF circuit performance.

Keywords

MOSFET; UHF field effect transistors; UHF power amplifiers; semiconductor device models; semiconductor device reliability; 900 MHz; MOS RF reliability; MOSFET; RF circuit performance; circuit reliability; class-AB power amplifier; compact model; cutoff frequency; dynamic voltage stress; hot carriers; inverter-like waveforms; linearity characteristics; noise figure; static stress; transconductance characteristics; Circuit testing; Cutoff frequency; Degradation; Linearity; MOSFETs; Performance evaluation; Radio frequency; Stress; Transconductance; Voltage; Breakdown (BD); MOS devices; circuit reliability; hot carriers (HCs); power amplifiers; stress;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.852546

Filename

1468364