Explicit continuous model for long-channel undoped surrounding gate MOSFETs

Author

Iñíguez, Benjamin ; Jiménez, David ; Roig, Jaume ; Hamid, Hamdy A. ; Marsal, Lluís F. ; Pallarès, Josep

Author_Institution

Departament d´´Enginyeria Electronica, Electrica i Automatica, Univ. Rovira i Virgili, Tarragona, Spain

Volume

52

Issue

8

fYear

2005

Firstpage

1868

Lastpage

1873

Abstract

We present an analytical and continuous dc model for cylindrical undoped surrounding-gate (SGT) MOSFETs in which the channel current is written as an explicit function of the applied voltages. The model is based on a new unified charge control model developed for this device. The explicit model shows good agreement with the numerical exact solution obtained from the new charge control model, which was previously validated by comparison with three-dimensional numerical simulations.

Keywords

MOSFET; semiconductor device models; channel current; compact device modeling; continuous dc model; explicit continuous model; long-channel undoped surrounding gate MOSFET; numerical simulations; unified charge control model; CMOS technology; Circuit simulation; Circuit synthesis; Helium; MOSFETs; Numerical simulation; Semiconductor device modeling; Semiconductor films; Silicon; Voltage; Charge control model; compact device modeling; surrounding-gate (SGT) MOSFETs;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.852892

Filename

1468380