Modeling of substrate noise coupling for nMOS transistors in heavily doped substrates

Author

Hsu, Shuching ; Fiez, Terri S. ; Mayaram, Kartikeya

Volume

52

Issue

8

fYear

2005

Firstpage

1880

Lastpage

1886

Abstract

An n-contact to p-contact model is proposed for analyzing substrate noise coupling in mixed-signal integrated circuits. The model takes advantage of an existing p-contact to p-contact model and combines it with a new concept of virtual separation. The virtual separation concept has been validated with three-dimensional device simulations and measurements from test structures fabricated in a 0.35 μm CMOS heavily doped process. This model is useful when transistor switching noise is the dominant source of substrate noise coupling.

Keywords

CMOS integrated circuits; MOSFET circuits; circuit simulation; integrated circuit modelling; integrated circuit noise; mixed analogue-digital integrated circuits; substrates; 0.35 micron; CMOS process; device simulations; heavily doped substrates; integrated circuit noise; mixed-signal integrated circuits; n-contact model; nMOS transistors; p-contact model; substrate coupling; substrate noise coupling; substrate parasitic extraction; transistor switching noise; virtual separation; CMOS process; Circuit simulation; Circuit testing; Coupling circuits; Integrated circuit measurements; Integrated circuit modeling; Integrated circuit noise; MOSFETs; Mixed analog digital integrated circuits; Semiconductor device modeling; Integrated circuit noise; modeling of noise coupling; substrate coupling; substrate noise; substrate parasitic extraction;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.852171

Filename

1468382