• DocumentCode
    1002872
  • Title

    High-efficiency Q-band GaAs FET oscillator

  • Author

    Tserng, Hua-Quen ; Kim, Bumki

  • Author_Institution
    Texas Instruments Incorporated, Dallas, USA
  • Volume
    20
  • Issue
    7
  • fYear
    1984
  • Firstpage
    297
  • Lastpage
    298
  • Abstract
    A microstrip GaAs FET oscillator using a 75 × 0.25 ¿m device has achieved an output power of 10 mW with an efficiency of 10% at 36 GHz. This oscillator was intended for local-oscillator applications at Q-band.
  • Keywords
    III-V semiconductors; field effect transistors; gallium arsenide; microwave oscillators; 10 mW; 36 GHz; III-V semiconductor; Q-band GaAs FET oscillator; local-oscillator applications; microstrip oscillator; output power;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840203
  • Filename
    4250491
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1002872