DocumentCode
1003229
Title
Enhanced exciton absorption in quantum-confined Stark effect of [110]-oriented InGaAsP quantum wells
Author
Oe, Katsutoshi ; Wakita, Ken ; Bhat, Ritesh ; Koza, M.A.
Author_Institution
Opto-Electron. Labs., Kanagawa, Japan
Volume
28
Issue
15
fYear
1992
fDate
7/16/1992 12:00:00 AM
Firstpage
1390
Lastpage
1391
Abstract
A new phenomenon of the quantum-confined Stark effect has been found in InGaAsP quantum wells grown on [110]InP substrates by MOVPE. Enhanced exciton absorption concurrent with the applied voltage is observed for the first time.
Keywords
III-V semiconductors; Stark effect; electroabsorption; excitons; gallium arsenide; gallium compounds; indium compounds; infrared spectra of inorganic solids; semiconductor quantum wells; InGaAsP quantum wells; InP substrate; MOVPE; MQW; [110] orientation; enhanced exciton absorption; photocurrent spectra; quantum-confined Stark effect;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920884
Filename
256031
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