A novel low on-resistance Schottky-barrier diode with p-buried floating layer structure

Author

Saito, Wataru ; Omura, Ichiro ; Tokano, Ken Ichi ; Ogura, Tsuneo ; Ohashi, Hiromichi

Author_Institution

Semicond. Co., Toshiba Corp., Kawasaki, Japan

Volume

51

Issue

5

fYear

2004

fDate

5/1/2004 12:00:00 AM

Firstpage

797

Lastpage

802

Abstract

A novel low on-resistance Schottky-barrier diode (SBD) structure with a p-buried floating layer is demonstrated by fabricating 300-V SBDs using a buried epitaxial growth technique. The fabricated SBDs realize a 50% reduction of chip area and show a possibility of higher breakdown voltage SBD of over 100 V. In addition, both the low on-resistance and the soft-recovery characteristics can be realized by the p-buried floating layer structure. The demonstrated structure is very attractive for reduction of power dissipation without electromagnetic interference noise increase.

Keywords

Schottky diodes; epitaxial growth; power semiconductor diodes; semiconductor device breakdown; 100 V; SBD structure; breakdown voltage; buried epitaxial growth; buried layer structure; electromagnetic interference noise; low on-resistance; on-resistance Schottky-barrier diode; p-buried floating layer structure; soft-recovery characteristics; Circuit noise; Electromagnetic interference; Epitaxial growth; Fabrication; MOSFET circuits; Noise reduction; Power MOSFET; Power dissipation; Schottky diodes; Voltage; Buried layer structure; Schottky-barrier diode; low on-resistance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2004.826886

Filename

1303841