• DocumentCode
    1003430
  • Title

    Degradation mechanisms induced by temperature in power MESFETs

  • Author

    Canali, C. ; Fantini, F. ; Umena, L. ; Zanoni, E.

  • Author_Institution
    UniversitÃ\xa0 di Padova, Istituto di Elettrotecnica e di Elettronica, Padova, Italy
  • Volume
    21
  • Issue
    14
  • fYear
    1985
  • Firstpage
    600
  • Lastpage
    601
  • Abstract
    Two independent failure mechanisms, mainly induced by temperature, were observed in unpassivated, Au-metallised, commercially available power MESFETs. They result in a high gate/source (drain) leakage and in an increase in the open channel resistance, and may explain the `burn-out¿ of the devices in practical applications.
  • Keywords
    III-V semiconductors; failure analysis; gallium arsenide; insulated gate field effect transistors; power transistors; AU-metallised; GaAs; III-V semiconductors; burn-out; degradation mechanisms; gate source leakage; independent failure mechanisms; open channel resistance; power MESFETs; temperature induced failures; unpassivated;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850423
  • Filename
    4250609
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1003430