DocumentCode
1003849
Title
Surface-oriented low-parasitic Mott diode for EHF mixer applications
Author
Mishra, Umesh K. ; Palmateer, S.C. ; Nightingale, S.J. ; Upton, M.A.G. ; Smith, P.M.
Author_Institution
General Electric Company, Electronics Laboratory, Syracuse, USA
Volume
21
Issue
15
fYear
1985
Firstpage
652
Lastpage
653
Abstract
The design and fabrication of a novel air-bridged, low-parasitic Mott diode is described. The devices were fabricated on epitaxial layers grown by MBE on SI undoped LEC substrates. Measurements on the diode at DC and RF showed that the zero bias capacitance was 0.025 pF, the parasitic capacitance 0.007 pF and the series resistance was approximately 10 ¿. Diode pairs were incorporated into monolithic single balanced mixers which exhibited a conversion loss of 6 dB at 30 GHz with a 1 GHz IF.
Keywords
Schottky-barrier diodes; microwave integrated circuits; mixers (circuits); monolithic integrated circuits; 30 GHz; MBE; conversion loss; epitaxial layers; low-parasitic Mott diode; monolithic single balanced mixers; parasitic capacitance; series resistance; zero bias capacitance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850463
Filename
4250658
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