DocumentCode
1003867
Title
Electrostatic capacitances in standard and pseudomorphic ultrashort gate length HEMTs
Author
Yazbek, Khaled ; de Lustrac, Andre ; Jin, Yichao ; Aniel, F. ; Crozat, P. ; Adde, R. ; Vernet, G.
Author_Institution
Univ. Paris Sud, Orsay, France
Volume
28
Issue
19
fYear
1992
Firstpage
1776
Lastpage
1778
Abstract
HEMT electrostatic capacitances are determined with a 2D finite element solver according to the device geometry. The calculation is compared with measurements on recessed ultrasubmicrometre rectangular gate and T-gate pseudomorphic and standard HEMTs on GaAs.
Keywords
capacitance; finite element analysis; high electron mobility transistors; semiconductor device models; 2D finite element solver; AlGaAs-GaAs; AlGaAs-InGaAs-GaAs; FEA; HEMTs; device geometry; electrostatic capacitances; pseudomorphic devices; standard devices; ultrashort gate length;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19921133
Filename
256091
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