• DocumentCode
    1003967
  • Title

    Tailored-gain broad-area semiconductor laser with single-lobed diffraction-limited far-field pattern

  • Author

    Lindsey, C. ; Derry ; Yariv, Amnon

  • Author_Institution
    California Institute of Technology, Applied Physics Department, Pasadena, USA
  • Volume
    21
  • Issue
    16
  • fYear
    1985
  • Firstpage
    671
  • Lastpage
    673
  • Abstract
    We demonstrate a 60 ¿m-wide asymmetric tailored-gain broad-area semiconductor laser with a single-lobed diffraction-limited far-field pattern 2.5° wide. The method used to achieve gain tailoring may be used to create nearly arbitrary two-dimensional spatial gain distributions within a broad-area laser.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; III-V semiconductors; arbitrary two-dimensional spatial gain distributions; asymmetric tailored-gain broad-area semiconductor laser; gain tailoring; laser width 60 microns; pattern lobe width 2.5°; single-lobed diffraction-limited far-field pattern;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850475
  • Filename
    4250677
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1003967