• DocumentCode
    1004730
  • Title

    Monte Carlo particle simulation of a GaAs short-channel MESFET

  • Author

    Awano, Y. ; Tomizawa, K. ; Hashizume, N. ; Kawashima, M.

  • Author_Institution
    Electrotechnical Laboratory, Tsukuba, Japan
  • Volume
    19
  • Issue
    1
  • fYear
    1983
  • Firstpage
    20
  • Lastpage
    21
  • Abstract
    A Monte Carlo particle simulation of a 0.25 ¿m-long gate (and 0.25 ¿m-long channel) GaAs MESFET having a practical doping density and sitting on a substrate is carried out. Extremely high values of gm and Idss of 643 mS/mm and 5.35 mA/20 ¿m were obtained. The near-ballistic nature of the electron transport in the FET was confirmed.
  • Keywords
    III-V semiconductors; Monte Carlo methods; Schottky gate field effect transistors; semiconductor device models; GaAs short-channel MESFET; Monte Carlo particle simulation; doping density; drain current; electron transport; near-ballistic nature; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830014
  • Filename
    4250767
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1004730