Direct Observation of Lateral Carrier Diffusion in Ridge Waveguide InGaNAs Lasers

Author

Adolfsson, Göran ; Wang, Shumin ; Sadeghi, Mahdad ; Bengtsson, Jörgen ; Larsson, Anders ; Lim, Jun Jun ; Vilokkinen, Ville ; Melanen, Petri

Author_Institution

Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg

Volume

21

Issue

3

fYear

2009

Firstpage

134

Lastpage

136

Abstract

We present results from measurements of the subthreshold lateral spontaneous emission profile in 1.3-mu m wavelength ridge waveguide InGaNAs quantum-well lasers using a scanning near-field optical microscopy technique. The measurements reveal the presence of significant lateral carrier diffusion which has a profound effect on the temperature dependence of the threshold current. This effect is frequently omitted when the characteristic temperature of the threshold current is considered.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser variables measurement; optical microscopy; ridge waveguides; semiconductor lasers; spontaneous emission; waveguide lasers; InGaNAs; lateral carrier diffusion; quantum-well lasers; ridge waveguide lasers; scanning near-field optical microscopy; semiconductor lasers; subthreshold lateral spontaneous emission profile; temperature dependence; wavelength 1.3 mum; Characteristic temperature; InGaNAs; lateral carrier diffusion; scanning near-field optical microscopy (SNOM); semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.2009128

Filename

4685948