DocumentCode
1005642
Title
Etched-coupled-cavity InGaAsP/InP lasers
Author
Chen, Kun-Long ; Wang, Shuhui
Author_Institution
University of California, Department of Electrical Engineering & Computer Sciences and Electronic Research Laboratory, Berkeley, USA
Volume
21
Issue
3
fYear
1985
Firstpage
94
Lastpage
95
Abstract
A new structure for coupled-cavity lasers operating at 1.25 ¿m wavelength is presented. Using chemical etching, we made a three-cavity laser from an index-guided channelled-substrate Fabry-Perot laser. It oscillates in a single longitudinal mode with a side-mode suppression ratio of 200:1 in the pumping current range of 120 mA to 220 mA. The same mode was maintained at a fixed current of 160 mA as the heat-sink temperature was varied from 9°C to 45°C. The advantages of this laser over other coupled-cavity lasers are the simplicity of fabrication, the accuracy of cavity length control, and the possibility of incorporating short-etalon sections in the coupled cavities.
Keywords
III-V semiconductors; etching; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser modes; semiconductor junction lasers; InGaAsP-InP etched coupled cavity laser; cavity length control; chemical etching; index-guided channelled-substrate Fabry-Perot laser; pumping current; semiconductor junction laser; short-etalon sections; side-mode suppression ratio; single longitudinal mode; three-cavity laser; wavelength 1.25 microns;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850065
Filename
4250874
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