• DocumentCode
    1005642
  • Title

    Etched-coupled-cavity InGaAsP/InP lasers

  • Author

    Chen, Kun-Long ; Wang, Shuhui

  • Author_Institution
    University of California, Department of Electrical Engineering & Computer Sciences and Electronic Research Laboratory, Berkeley, USA
  • Volume
    21
  • Issue
    3
  • fYear
    1985
  • Firstpage
    94
  • Lastpage
    95
  • Abstract
    A new structure for coupled-cavity lasers operating at 1.25 ¿m wavelength is presented. Using chemical etching, we made a three-cavity laser from an index-guided channelled-substrate Fabry-Perot laser. It oscillates in a single longitudinal mode with a side-mode suppression ratio of 200:1 in the pumping current range of 120 mA to 220 mA. The same mode was maintained at a fixed current of 160 mA as the heat-sink temperature was varied from 9°C to 45°C. The advantages of this laser over other coupled-cavity lasers are the simplicity of fabrication, the accuracy of cavity length control, and the possibility of incorporating short-etalon sections in the coupled cavities.
  • Keywords
    III-V semiconductors; etching; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser modes; semiconductor junction lasers; InGaAsP-InP etched coupled cavity laser; cavity length control; chemical etching; index-guided channelled-substrate Fabry-Perot laser; pumping current; semiconductor junction laser; short-etalon sections; side-mode suppression ratio; single longitudinal mode; three-cavity laser; wavelength 1.25 microns;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850065
  • Filename
    4250874